MMJT350T1
Bipolar Power Transistors
PNP Silicon
. . . designed for use in line−operated applications such as low
power, line−operated series pass and switching regulators requiring
PNP capability.
• High Collector−Emitter Sustaining Voltage −
VCEO(sus) = 300 Vdc @ IC
= 1.0 mAdc
• Excellent DC Current Gain −
hFE = 30−240 @ IC
= 50 mAdc
• Epoxy Meets UL94, V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B; > 8000 V
Machine Model, C; > 400 V http://onsemi.com
Device Package Shipping
ORDERING INFORMATION
MMJT350T1 SOT−223 1000 / Tape &
Reel
SOT−223
CASE 318E
Style 1
MARKING
DIAGRAM
AYM
T350
T350 = Specific Device Code
A = Assembly Location
Y = Last Digit of Y
MMJT350T1
Bipolar Power Transistors
PNP Silicon
. . . designed for use in line−operated applications such as low
power, line−operated series pass and switching regulators requiring
PNP capability.
• High Collector−Emitter Sustaining Voltage −
VCEO(sus) = 300 Vdc @ IC
= 1.0 mAdc
• Excellent DC Current Gain −
hFE = 30−240 @ IC
= 50 mAdc
• Epoxy Meets UL94, V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B; > 8000 V
Machine Model, C; > 400 V
http://onsemi.com
Device Package Shipping
ORDERING INFORMATION
MMJT350T1 SOT−223 1000 / Tape &
Reel
SOT−223
CASE 318E
Style 1
MARKING
DIAGRAM
AYM
T350
T350 = Specific Device Code
A = Assembly Location
Y = Last Digit of Y